bc636 ? pnp epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com bc636 rev. c3 1 march 2009 bc636 pnp epitaxial silicon transistor switching and ampl ifier applications ? complement to bc635 absolute maximum ratings t a = 25 c unless otherwise noted electrical characteristics t a = 25c unless otherwise noted symbol parameter value units v cer collector-emitter voltage at r be =1k -45 v v ces collector-emitter voltage -45 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current -1 a i cp peak collector current -1.5 a i b base current -100 ma p c collector power dissipation 1 w t j junction temperature 150 c t stg storage temperature -65 ~ 150 c symbol parameter test condition min. typ. max. units bv ceo collector-emitter breakdown voltage i c = -10ma, i b =0 -45 v i cbo collector cut-off current v cb = -30v, i e =0 -0.1 a i ebo emitter cut-off current v eb = -5v, i c =0 -10 a h fe1 h fe2 h fe3 dc current gain v ce = -2v, i c = -5ma v ce = -2v, i c = -150ma v ce = -2v, i c = -500ma 25 40 25 250 v ce (sat) collector-emitter saturation voltage i c = -500ma, i b = -50ma -0.5 v v be (on) base-emitter on voltage v ce = -2v, i c = -500ma -1 v f t current gain bandwidth product v ce = -5v, i c = -10ma, f=50mhz 100 mhz 1. emitter 2. collector 3. base to-92 1
bc636 ? pnp epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com bc636 rev. c3 2 package marking and ordering information device marking device package bc636 bc636 to-92 bc636 bc636bu to-92 bc636 bc636ta to-92 bc636 bc636tar to-92 bc636 bc636tf to-92 bc636 bc636tfr to-92 bc636 bc636_j35z to-92
bc636 ? pnp epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com bc636 rev. c3 3 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage coll ector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance -0 -10 -20 -30 -40 -50 -0 -100 -200 -300 -400 -500 i b = - 0.2 ma i b = - 0.4 ma i b = - 0.6 ma i b = - 0.8 ma i b = - 1.0 ma i b = - 1.2 ma i b = - 1.4 ma i b = - 1.6 ma i b = - 1.8 ma i c [ma], collector current v ce [v], collector-emitter voltage -1 -10 -100 -1000 10 100 1000 v ce = - 2v h fe , dc current gain i c [ma], collector current -1 -10 -100 -1000 -0.01 -0.1 -1 -10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 -1000 v ce = - 2v i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 1 10 100 f=1mhz c ob [pf], capacitance v cb [v], collector-base voltage
bc636 ? pnp epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com bc636 rev. c3 4 mechanical dimensions 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1 .02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.1 0 ?.0 5 0.38 +0.10 ?.05 to-92 dimensions in millimeters
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